Method and apparatus for forming non-single crystal layer

ABSTRACT

A substrate introducing chamber, a reaction chamber and a substrate removing chamber are sequentially arranged with a shutter between adjacent ones of them. One or more substrates are mounted on a holder with their surfaces lying in vertical planes and carried into the substrate introducing chamber, the reaction chamber and the substrate removing chamber one after another. In the reaction chamber, a material gas is guided by gas guides to flow along the substrate surfaces in a limited space in which the substrates are disposed. The material gas is ionized into a plasma through the use of high-frequency energy obtained across a pair electrodes. The line of electric force of the high-frequency energy is directed along the substrate surfaces. By ionization of the material gas into the plasma, a non-single-crystal layer is formed, by deposition, on each substrate. At this time, the substrates are floating off the high-frequency energy source.

This application is a continuation of Ser. No. 829,079, filed Feb. 13,1986, now abandoned, which is a divisional of Ser. No. 533,941, filedSept. 20, 1983, now U.S. Pat. No. 4,582,720.

BACKGROUND OF THE INVENTION

1. Field Of the Invention

The present invention relates to a method and apparatus for forming anon-single-crystal layer on a substrate, and more particularly to amethod and apparatus for forming a non-single-crystal layer which aresuitable for the manufacture of semiconductor photoelectric conversiondevices for use as solar cells.

2. Description of the Prior Art

Heretofore there has been proposed a method according to which amaterial gas for forming a non-single-crystal layer is introduced into areaction chamber and is excited to form the non-single-crystal layer bydeposition on one or more substrates disposed in the reaction chamber.

With such a conventional method, the material gas is introduced into thereaction chamber to fill it up and, consequently, the excited materialgas not only passes over the substrates but also unnecessarily flowseverywhere in the chamber. Accordingly, the utilization rate of thematerial gas is as low as about 1 to 3% and, further, thenon-single-crystal layer is formed at as low a rate as approximately 0.1to 2 Å per second.

Moreover, since the excited material gas allowed to flow in contact withthe inner wall of the reaction chamber, flakes formed by the excitedmaterial gas stick to the inner wall of the reaction chamber, and theyoften fall off onto the substrate. Accordingly, it is very likely thatthe non-single-crystal layer contains therein the flakes or has a numberof pin-holes resulting from the bombardment by the flakes.

According to the prior art method, in the case of exciting the materialgas by ionizing it into a plasma through the use of high-frequencyelectrical energy, the direction of its electric line of force isselected to cross the substrate. On account of this, thenon-single-crystal layer may sometimes be damaged due to sputtering bythe excited material gas, i.e. the material gas plasma.

Furthermore, in the case of using high-frequency electrical energy whichis obtained across a pair of electrodes, the material gas is excited insuch a state that the potential of either one of the electrodes is beingapplied to the substrate. With this method, however, undesirable flakesformed by the excited material gas stick to the substrate surface,resulting in the non-single-crystal layer containing the flakes inquantity.

A conventional non-single-crystal layer forming apparatus for the abovesaid method naturally possesses such defects as mentioned above.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide a novelnon-single-crystal forming method and apparatus which are free from theabove said defects.

In accordance with an aspect of the present invention, a material gasstream in the reaction chamber is directed to the limited space in whicha substrate is placed, and is passed over the substrate surface, formingthereon a non-single-crystal layer. With this method, the utilizationrate of the material gas can be raised as high as about 40 to 70%, whichis far higher than in the prior art. Further, the non-single-crystallayer can be formed at a far higher rate than that obtainable with theprior art. In addition, substantially no flakes are formed on the innerwall of the reaction chamber and fall off the inner wall, so thenon-single-crystal layer can be formed without containing therein flakesor pinholes.

In accordance with another aspect of the present invention, thenon-single-crystal layer is formed on the substrate which is disposedwith its surface lying in a vertical plane or plane close thereto.Accordingly, even if flakes are formed by the excited material gas, theydo not substantially fall on the substrate, ensuring to form thenon-single-crystal layer without containing the flakes or pinholes.

In accordance with another aspect of the present invention, in the caseof exciting the material gas by ionizing it into a plasma through theuse of high-frequency electric energy, its electric line of force isdirected along the substrate surface. This essentially preventssputtering of the substrate by the material gas plasma, ensuring toobtain the non-single-crystal layer with practically no damages bysputtering.

In accordance with another aspect of the present invention, in the caseof ionizing the material gas into a plasma for excitation through theuse of high-frequency electric energy which is obtained across a pair ofelectrodes, the excitation is carried out without applying the potentialof either one of the electrodes to the substrate. This essentiallyprevents that the undesirable flakes formed by the excited material gasstick to the substrate, ensuring to form a homogeneousnon-single-crystal layer without the flakes.

In accordance with another aspect of the present invention, thenon-single-crystal layer forming apparatus has the arrangement thatprovides the above said excellent features in the formation of thenon-single-crystal layer.

Other objects, features and advantages of the present invention willbecome more fully apparent from the following description taken inconjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic longitudinal sectional view of an example of thenon-single-crystal layer forming apparatus according to the presentinvention, explanatory of an example of the non-single-crystal layerforming method of the invention;

FIG. 2 is a sectional view taken on the line II--II in FIG. 1;

FIG. 3 is a schematic longitudinal sectional view, corresponding to FIG.2, of another example of the non-single-crystal layer forming apparatusaccording to the present invention, explanatory of another example ofthe non-single-crystal layer forming method of the invention;

FIGS. 4 and 5 are schematic sectional view respectively illustratingmodified forms of a holder for use in the non-single-crystal layerforming method of the present invention; and

FIG. 6 is a schematic longitudinal sectional view, corresponding to FIG.1, of another example of the non-single-crystal layer forming apparatusaccording to the present invention, explanatory of another example ofthe non-single-crystal layer forming method of the invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

A description will be given first of the non-single-crystal layerforming apparatus of the present invention.

FIG. 1 illustrates an embodiment of the apparatus which has thefollowing arrangement.

A substrate introducing chamber A, a reaction chamber B and a substrateremoving chamber C are arranged in this order.

The substrate introducing chamber A is so designed as to communicatewith the outside when a shutter 10A is opened which is provided on theopposite side from the reaction chamber B. The substrate introducingchamber A and the reaction chamber B are constructed so that theyintercommunicate when a shutter 10AB is opened which is providedtherebetween. The reaction chamber B and the substrate removing chamberC are similarly constructed so that they intercommunicate when a shutter10BC is opened which is provided therebetween. The substrate removingchamber C is so adapted as to communicate with the outside when ashutter 10C is opened which is provided on the opposite side from thereaction chamber B.

The substrate introducing chamber A is linked with an inert gas source13A through an inert gas supply pipe 11A and a gas stream control valve12A, and is linked with an exhaust pump 16A through a gas exhaust pipe14A and a gas stream control valve 15A.

The reaction chamber B is linked with a material gas source 13B througha material gas supply pipe 11B and a gas stream control valve 12B, andis linked with an exhaust pump 16B through a gas exhaust pipe 14B and agas stream control valve 15B.

The substrate removing chamber C is linked with an inert gas source 13Cthrough an inert gas supply pipe 11C and a gas stream control valve 12C,and is linked with an exhaust pump 16C through a gas exhaust pipe 14Cand a gas stream control valve 15C as is the case with the substrateintroducing chamber A.

In the substrate introducing chamber A rod-like infrared heaters 21A arearranged in succession in a horizontal plane to extend in the directionperpendicular to the plane of paper on the side of the top wall of thechamber A. On the side of the bottom wall similar infrared heaters 22Aare arranged in succession in a horizontal plane to extend in thedirection perpendicular to the direction of extension of the infraredheaters 21A.

Also in the direction chamber B, infrared heaters 21B and 22B aresimilarly disposed on the side of the top wall and the side of thebottom wall of the chamber B.

On the side of the infrared heaters 21B disposed in the reaction chamberB a gas guide 25B, which is formed by a cylindrical body 24B made of aninsulating material and covered at one end with an end plate 23Bsimilarly made of an insulating material, is disposed in the verticaldirection with the end plate 23B on the side of the infrared heaters21B. The gas guide 25B is linked, on the side of the end plate 23B, withthe material gas supply pipe 11B extending from the material gas source13B. In the cylindrical body 24B of the gas guide 25B a plate 27B madeof an insulating material and having a number of through holes 26B isdisposed in a horizontal plane at a distance from the end plate 23B. Onthe side of the infrared heaters 22B disposed in the reaction chamber Ba similar gas guide 30B, which is formed by a cylindrical body 29Bclosed at one end with an end plate 28B, is disposed with the end plate28B on the side of the infrared heaters 22B and coaxially with the gasguide 25B in opposing relation thereto. The gas guide 30B is linked, onthe side of the end plate 28B, with the gas exhaust pipe 14B extendingfrom the exhaust pump 16B. In the cylindrical body 29B of the gas guide30B a plate 32B, which is similar to the aforementioned plate 27B andhas a number of through holes 31B, is disposed in a horizontal plane ata distance from the end palte 28B.

In the cylindrical body 24B of the gas guide 25B a mesh-like orperforated-plate-like gas-permeable electrode 41B is disposed in ahorizontal plane on the side of the plate 27B. Further, a similarelectrode 42B is disposed in a horizontal plane on the side of the plate32B in the cylindrical body 29B of the gas guide 30B.

The electrodes 41B and 42B disposed in the reaction chamber B arerespectively connected to a cathode terminal 44N and an anode terminal44P of a high-frequency power source 43 which is disposed outside thereaction chamber B and provides a high frequency of 13.56 MHz.

Further, as will be seen from FIG. 2, the reaction chamber B isconnected, on the side of its rear panel, to an ultrahigh frequencypower source 45B, which is a microwave source or millimeter wave source,through a waveguide 46B and a window 47B which is made in the rear panelof the reaction chamber B and which inhibits the passage therethrough ofgas but permits the passage therethrough of ultrahigh frequency power.

Incidentally, as will be seen from FIG. 2, the front panel of thereaction chamber B has made therein an inspection or observation window48B for observation of the inside thereof. The front panel of each ofthe substrate introducing chamber A and the substrate removing chamber Chas also made therein a similar observation window for observation ofthe inside thereof, though not shown.

The above is a description of the arrangement of one embodiment of thenon-single-crystal layer forming apparatus.

Such a non-single-crystal layer forming apparatus is used with thenon-single-crystal layer forming method of the present invention.

Next, a description will be given of the non-single-crystal layerforming method of the present invention.

An example of the non-single-crystal layer forming method is carried outthrough the use of the above-described apparatus in the followingmanner:

Outside the apparatus, a number of substrates 60 are premounted on aholder 70 as indicated by the broken lines in the reaction chamber B inFIGS. 1 and 2.

The holder 70 has a square tubular body which is comprised of a pair ofplates 72 and 73, each having a number of parallel groove 71 forreceiving marginal edges of the substrates 60 and another pair of plates74 and 75. The plates 72 and 73 are held in vertical planes and inparallel and opposing relation to each other with their grooves 71extending in the vertical direction. The plates 74 and 75 are also heldin vertical planes and in parallel and opposing relation to each other.The holder 70 has a flange 76 which is formed integrally with the squaretubular body to extend outwardly thereof in a horizontal plane.

The substrate 60 are received at one of their opposite marginal edges bythe grooves 71 of the plate 72 and at the other marginal edge by thegrooves 71 of the plate 73 so that they may be held by the holder 70 inparallel and have their surfaces extending in vertical planes. Theoutermost ones of the substrates 60 on both sides have their backs heldin contact with the inner surfaces of the plates 74 and 75,respectively, and the other remaining substrates 60 are held inback-to-back relation to adjacent ones of them.

The holder 70 having mounted thereon the substrates 60 as describedabove is brought into the substrate introducing chamber A, with theshutter 10A temporarily opened, as indicated by the chain lines inFIG. 1. In this case, the holder 70 is supported by a carrier rod (notshown) at the underside of the flange 76 and brought into the substrateintroducing chamber A. The holder 70 thus brought into the chamber A issupported at the underside of the flange 76 by a support member (notshown) which is manipulated from the outside of the substrateintroducing chamber A so that the surfaces of the substrates 60 may liein vertical planes, though not described in detail.

Next, the substrates 60 and the holder 70 are heated by the infraredheaters 21A and 22A provided in the substrate introducing chamber A and,at the same time, gas in the chamber A is discharged by the exhaust pump16A to the outside through the gas exhaust pipe 14A and the gas streamcontrol valve 15A to make the inside of the substrate introducingchamber A vacuous, thereby cleansing the substrates 60 and the holder70.

In this while, gas in the reaction chamber B is exhausted by the exhaustpump 16B through the gas exhaust pipe 14B and the gas stream controlvalve 15B to make the inside of the chamber B vacuous, cleaning it.

Next, the shutter 10AB between the chambers A and B is temporarilyopened and the holder 70, which has mounted thereon the substrates 60purified in the chamber A, is brought into the reaction chamber B whilebeing supported by a carrier rod (not shown) which is inserted from theoutside of the substrate introducing chamber A in the same manner asdescribed above. The holder 70 thus brought into the reaction chamber Bis supported by a support member (not shown) so that the substrates 60may be positioned between the gas guides 25B and 30B, with the substratesurfaces held in vertical planes, as described previously.

Next, the gas in the reaction chamber B is discharged by the exhaustpump 16B to the outside through the gas exhaust pipe 14B and the gasstream control valve 15B and, at the same time, a material gas isintroduced into the reaction chamber B from the material gas source 13Bthrough the material gas supply pipe 11B and the gas stream controlvalve 12B. Further, high frequency is applied across the electrodes 41Band 42B from the high-frequency power source 43. At the same time,ultrahigh-frequency power is introduced into the reaction chamber B fromthe ultrahigh-frequency power source 45B through the waveguide 46B andthe window 47B and, further, the inside of the reaction chamber B isheated by the infrared heaters 21B and 22B, by which the material gasintroduced into the reaction chamber B is excited for ionization into aplasma. In this way, non-single-crystal layers (not shown) are formed onthe substrates 60 in the reaction chamber B.

In this case, when a silane gas is used as the material gas, anon-single-crystal silicon layer; when a gas mixture of aluminumchloride and/or triethyl aluminum, hydrogen and/or helium is employed, anon-single-crystal aluminum layer can be formed; when a gas mixture of acarbonyl compound of iron, nickel or cobalt, hydrogen and/or helium isemployed, a non-single-crystal iron, nickel or cobalt layer can beformed; when a gas mixture of silane and ammonium gases is used, anon-single-crystal silicon nitride layer can be formed; when a gasmixture of a silane gas, nitrogen peroxide and nitrogen is used, anon-single-crystal silicon oxide layer can be formed; and when a gasmixture of a molybdenum chloride gas or tungsten fluoride gas and silanegas is used, a non-single-crystal molybdenum silicide or tungstensilicide layer can be formed.

When the non-single-crystal layers are formed on the substrates 60 inthe reaction chamber B, the material gas from the material gas supplypipe 11B enters and spreads between the end plate 23B and the plate 27Bhaving the apertures 26B in the cylindrical body 24B of the gas guide25B, thence passes through the apertures 26B of the plate 27B and thenceflows across the electrode 41B. Then the material gas flows betweenadjacent ones of the substrates 60. Next, the material gas flows intothe cylindrical body 29B of the gas guide 30B, thence flows across theelectrode 42B, thence flows through the apertures 31B of the plate 32B,thereafter flowing between the end plate 28B and the plate 32B havingthe apertures 31B in the cylindrical body 29B of the gas guide 30B.Next, the material gas is discharged to the outside through the gasexhaust pipe 14B, the gas stream control valve 15B and the exhaust pump16B.

In the reaction chamber B the material gas flows between adjacent onesof the substrate 60 in the space defined by the gas guides 25B and 30Bas described above. When the material gas flows between adjacent ones ofthe substrates 60, it is limited by the both outermost ones of thesubstrates 60 and the plates 72 to 75 of the holder 70 from spreadingout laterally. The spaces defined between the gas guide 25B and theholder 70 and between the holder 70 and the gas guide 30B are both verysmall.

Accordingly, the material gas in the reaction chamber B flows along thesubstrate surfaces in the limited space in which the substrates 60 aredisposed.

This permits the formation of the non-single-crystal layers with a highutilization rate of the material gas and at high rate. Further, flakesare hardly formed on the inner wall of the reaction chamber B and,consequently, substantially no flakes fall off the inner wall of thechamber B. Moreover, even if flakes are formed on that part of theholder 70 which is not covered with the substrates 60 and on theinterior surface of the gas guide 25B and even if such flakes fall offthem, the substrate surfaces are almost free from the bombardment withthe flakes because they are held in vertical planes. Accordingly, thenon-single-crystal layers can be formed with practically no flakes andpinholes.

The material gas, when flowing between adjacent ones of the substrates60, is excited into a plasma by high-frequency electric energy which isobtained across the electrodes 41B and 42B by high-frequency powerapplied thereacross from the high-frequency source 43,ultrahigh-frequency energy which is created by ultrahigh-frequency powersupplied into the reaction chamber B and thermal energy which isradiated from the infrared heaters 21B and 22B. In this case, theelectrodes 41B and 42B lie in horizontal planes, whereas the substratesurfaces lie in vertical planes. This ensures that the line of electricforce of the high-frequency electric energy obtained across theelectrodes 41B and 42B is directed along the substrate surfaces.

Therefore, the non-single-crystal layers are not substantially subjectedto sputtering by the excited material gas, and hence they can be formedwith practically no damages from sputtering.

Besides, when the material gas is ionized into a plasma, the substrates60 are not supplied with the potential of either of the electrodes 41Band 42B; namely, they are floating off the high-frequency power source43. This prevents undesirable flakes from sticking to thenon-single-crystal layers. Consequently, the non-single-crystal layerscan be formed with practically no flakes.

In addition, since the substrates 60 are spaced apart from theelectrodes 41B and 42B, the entire area of each substrate surface ispositioned in a region in which the high-frequency energy developedacross the electrodes 41B and 42B is stable. Accordingly, thenon-single-crystal layers can each be formed homogeneously and to thesame thickness throughout it.

Further, the electrode 41B disposed upstream of the material gas passageand the electrode 42B disposed downstream of the material gas passageare a cathode and an anode, respectively, so that even if flakes stickto the gas guides 25B and 30B and the holder 70, the amount of flakessticking to the upstream gas guide 25B and the portion of the holder onthe upstream side is far smaller than the amount of flakes sticking tothe downstream gas guide 30B and the portion of the holder 70 on thedownstream side. Therefore, the non-single-crystal layer can be formedwith practically no flakes.

After forming the non-single-crystal layers on the substrates 60 in thereaction chamber B as described above, the supply of the material gasfrom the material gas source 13B to the reaction chamber B is stopped,holding the inside of the reaction chamber B vacuous.

On the other hand, while the non-single-crystal layers are being formedon the substrates 60 in the reaction chamber B as described above, gasin the substrate removing chamber C is discharged by the exhaust pump16C to the outside through the gas exhaust pipe 14C and the gas streamcontrol valve 15C to make the inside of the substrate removing chamberC, thereby purifying it.

Next, after the formation of the non-single-crystal layers on thesubstrates 60 in the reaction chamber B, the shutter 10BC between thechambers B and C is opened and the holder 70 which has mounted thereonthe substrates 60, which have formed thereon the non-single-crystallayers, is brought into the substrate removing chamber C as indicated bythe chain line in FIG. 1. In this case, the holder 70 is supported by acarrier rod (not shown) inserted from the outside of the chamber C andis moved into the chamber C in the same manner as referred topreviously. Further, the holder 70 thus brought into the substrateremoving chamber C is supported by a support member (not shown) in thesame manner as described previously.

Next, the inert gas is introduced into the substrate removing chamber Cfrom the inert gas source 13C through the inert gas supply pipe 11C andthe gas stream control valve 12C so that the pressure in the chamber Crises up to the atmospheric pressure or a pressure close thereto.

Next, the shutter 10C is opened and the holder 70 is brought out of thechamber C, and then the supply of the inert gas from the inert gassource 13C to the substrate removing chamber C is stopped. Finally, thesubstrates 60 having formed thereon the non-single-crystal layers aredismounted from the holder 70.

In practice, in the period during which the holder 70 (hereinafterreferred to as the first holder 70) having mounted thereon thesubstrates, carried out of the substrate introducing chamber A into thereaction chamber B, is carried out therefrom into the substrate removingchamber C, the inert gas introduced into the substrate introducingchamber A from the inert gas source 13A through the gas supply pipe 11Aand the gas stream control valve 12A until the pressure in the chamber Arises up to the atmospheric pressure or a pressure close thereto, afterwhich the shutter 10A is opened and a second holder 70 carrying newsubstrates 60 is brought into the substrate introducing chamber A andthen the supply of the inert gas to the chamber A from the inert gassource 13A is stopped, thereafter holding the inside of the chamber A ina vacuum condition as described previously.

Moreover, when the first holder 70 carrying the substrates 60 with thenon-single-crystal layers formed thereon is brought into the substrateremoving chamber C from the reaction chamber B, the second holder 70placed in the chamber A until then is brought out therefrom into thereaction chamber B, with the shutter 10AB opened, and thennon-single-crystal layers are formed on the substrates mounted on thesecond holder 70 as described previously. And, in the period in whichthe non-single-crystal layers are thus formed on the substrate 60mounted on the holder 70, a third holder 70 is carried into thesubstrate introducing chamber A in the same way as described previously.

Furthermore, after the first holder 70 carrying the substrates 60 withthe non-single-crystal layers formed thereon is brought out of thesubstrate removing chamber C and after the inside of the chamber C ismade vacuous, the second holder 70 is carried into the chamber C and, atthe same time, the third holder 70 is carried out of the chamber A intothe chamber B.

In the manner described above, the substrates 60 having formed thereonthe non-single-crystal layers are continuously obtained.

The above is a description of an example of each of thenon-single-crystal layer forming method and apparatus of the presentinvention. Next, a description will be given of modifications andvariations of this invention method and apparatus.

The reaction chamber B of the apparatus described previously inconnection with FIGS. 1 and 2 can be modified as follows: That is, thegas guides 25B and 30B in the chamber B can also be disposed on thesides of the rear and front walls of the chamber B instead of beingdisposed on the sides of the top and bottom walls thereof as shown inFIG. 3. Needless to say, in this case, the apertured plate 27B and theelectrode 41B are disposed in the gas guide 25B, and the apertured plate32B and the electrode 42B are placed in the gas guide 30B as is the casewith FIGS. 1 and 2.

Further, when such apparatus as shown in FIG. 3 is used, thenon-single-crystal layer forming method is modified correspondingly asfollows:

While in the foregoing example the holder 70 is designed so that when itis transferred into the chambers A, B and C one after another, itsgrooves 71 extend in the vertical direction and, consequently, thesubstrates 60 mounted on the holder 70 lie in the vertical planes, theholder 70 is adapted so that its grooves 71 extend in the horizontaldirection and so that the substrates 60 lie in vertical planes.

In such a case, though not described in detail, the relation between thesubstrates 60 and the material gas flow and the relation between thesubstrates 60 and the electrodes 41B and 42B in the reaction chamber Bare the same as those in the case of FIGS. 1 and 2, so thatnon-single-crystal layers can be formed on the substrates 60 with thesame excellent features as described previously in respect of FIGS. 1and 2.

With the non-single-crystal layer forming method of the presentinvention described in the foregoing, the substrates 60 are transferredthrough the chambers A, B and C while being held with the substratesurfaces in vertical planes.

However, though not described in detail, even if the substrates 60 aremounted on the holder 70 with the substrate surface aslant as shown inFIGS. 4 and 5, when the inclination angle of the substrate surface tothe vertical plane is sufficiently small, non-single-crystal layers canbe formed on the substrates 60 in the same manner as describedpreviously.

Besides, although in the foregoing one non-single-crystal layer isformed on each substrate 60 in the reaction chamber B, it is alsopossible to form a plurality of non-single-crystal layers of differentkinds on each substrate 60 by introducing different material gases oneafter another into the reaction chamber B while the substrates 60 areheld therein.

Moreover, while in the foregoing the non-single-crystal layer formingapparatus has one reaction chamber B, plural, for instance, threereaction chambers E, F and G, similar to the reaction chamber B, mayalso be arranged successively between the substrate introducing chamberA and the substrate removing chamber C through shutters 10AE, 10EF, 10FGand 10GC which are similar to the shutters 10AB and 10BC as shown inFIG. 6. In this case, a material gas source 13E is linked with thereaction chamber E through a material gas supply pipe 11E and a gasstream control valve 12E, and an exhaust pump 16E is linked with thereaction chamber E through a gas exhaust pipe 14E and a gas streamcontrol valve 15E. A material gas source 13F is linked with the reactionchamber F through a material gas supply pipe 11F and a gas streamcontrol valve 12F, and an exhaust pump 16F is linked with the reactionchamber F through a gas exhaust pipe 14F and a gas stream control valve15F. A material gas source 13G is linked with the reaction chamber Gthrough a material gas supply pipe 11G and a gas stream control valve12G, and an exhaust pump 16G is linked with the reaction chamber Gthrough a gas exhaust pipe 14G and a gas stream control valve 15G.

Further, in the reaction chamber E are disposed infrared heaters 21E and22E similar to the aforementioned ones 21B and 22B, gas guides 25E and30E similar to the aforementioned ones 25B and 30B, plates 27E and 32Esimilar to the aforementioned ones 27B and 32B, and electrodes 41E and42E similar to the aforementioned ones 41B and 42B. In the reactionchamber F are disposed infrared heaters 21F and 22F similar to theaforementioned ones 21B and 22B, gas guides 25F and 30F similar to theaforementioned ones 25B and 30B plates 27F and 32F similar to theaforementioned ones 27B and 32B, and electrodes 41F and 42F similar tothe aforementioned ones 41B and 42B. In the reaction chamber G aredisposed infrared heaters 21G and 22G similar to the aforementioned ones21B and 22B, gas guides 25G and 30G similar to the aforementioned ones25B and 30B, plates 27G and 32G similar to the aforementioned ones 27Band 32B, and electrodes 41G and 42G similar to the aforementioned ones41B and 42B.

With the use of the non-single-crystal layer forming apparatus shown inFIG. 6, since it has the three reaction chambers E, F and G, it ispossible to form on each substrate 60 three non-single-crystal layers inthe form of a laminate layer in the reaction chambers E, F and G oneafter another in the same manner as described previously. Accordingly,it is possible to fabricate on each substrate a photoelectric conversiondevice which has a P type non-single-crystal semiconductor layer, an Itype non-single-crystal semiconductor layer and an N typenon-single-crystal semiconductor layer formed in succession and servesas a solar cell.

Although in the foregoing the high-frequency energy, theultrahigh-frequency energy and the thermal energy are employed forexcitation of the material gas, the ultrahigh-frequency energy and thethermal energy need not always used, and photo energy can also beemployed in place of one or more of the high-frequency, the ultrahighfrequency and the thermal energy.

It will be apparent that many modifications and variations may beeffected without departing from the scope of the novel concepts of thepresent invention.

What is claimed is:
 1. An apparatus for forming at least onenon-single-crystal layer on a plurality of substrates comprising:asubstrate introducing chamber; a tubular substrate holder for holding aplurality of substrates with their surfaces lying in vertical planes orplanes close thereto; means for introducing said substrate holder intosaid substrate introducing chamber; means for cleaning the substratesand the substrate holder while in the substrate introducing chamber, bydischarging gas in the substrate introducing chamber through use of anexhaust pump; at least one reaction chamber; means for transferring thecleaned substrate holder and substrates to the reaction chamber; meansfor depositing non-single-crystal layers respectively on said substratesthrough a CVD process by supplying a stream of a material gas into thetubular substrate holder while in said reaction chamber, the depositingmeans being provided with means for heating said substrate holder andsaid substrates from the outside of the substrate holder; a substrateremoving chamber; and means for transferring said sustrate holder andthe coated substrates to the substrate removing chamber, wherein thedepositing means is provided with means for introducing the material gasinto the reaction chamber, first and second gas guide means for guidingthe material gas to pass it along the substrate surfaces, means forexhausting gas from the reaction chamber and means for exciting thematerial gas, wherein the material gas exciting means is provided withfirst and second electrodes for obtaining high-frequency electricenergy, and wherein the first and second electrodes are disposed so thatthe line of electric force of the high frequency electric energy mayextend along the substrate surfaces, and wherein the first and secondelectrodes are disposed as a cathode and an anode upstream anddownstream of a material gas passage, respectively, and wherein thefirst and second electrodes have the property of permitting the passagetherethrough of the material gas, and are disposed in the first andsecond gas guide means, respectively.
 2. Non-single-crystal layerforming apparatus according to claim 1, wherein the material gasexciting means is provided with means for supplying ultrahigh-frequencyelectric energy into the reaction chamber.
 3. A method for forming atleast one non-single-crystal layer on a plurality of substrates,comprising the steps of:providing a substrate introducing chamber;providing a tubular substrate holder for holding said plurality ofsubstrates with their surfaces lying in vertical planes or planes closethereto; introducing said substrate holder into said substrateintroducing chamber; cleaning the substrates and the substrate holderwhile in the substrate introducing chamber, by discharging gas in thesubstrate introducing chamber through use of an exhaust pump; providingat least one reaction chamber; transferring the cleaned substrate holderand substrates to the reaction chamber; depositing non-single-crystallayers respectively on said substrates through a CVD process bysupplying a stream of a material gas into the tubular substrate holderwhile in said reaction chamber, wherein the substrate holder and thesubstrates are heated from the outside of the substrate holder;providing a substrate removing chamber; transferring said substrateholder and the coated substrates to the substrate removing chamber,wherein the material gas is guided by first and second gas guide meansprovided upstream and downstream of a gas passage, respectively, so thatthe stream of the material gas passes along the substrate surfaces inthe limited space in which the substrates are placed, wherein thesubstrates are disposed at predetermined intervals, and wherein thestream of the material gas passing along the surface of each of thesubstrates is prevented by both outermost ones of them from spreadinglaterally; wherein the material gas is ionized into a plasma forexcitation by high-frequency electric energy having its line of electricforce extending along the substrate surfaces; wherein the high-frequencyelectric energy is obtained across first and second electrodes disposedin the reaction chamber, and wherein the material gas is ionized into aplasma in a state in which the substrates are disposed between the firstand second electrodes and are not supplied with the potential of eitherof the first and second electrodes; and wherein the material gas isionized into a plasma in a state in which the first electrode isdisposed in said first gas guide means as a cathode upstream of thematerial gas passage and the second electrode is disposed in said secondgas guide means as an anode downstream of the material gas passage.
 4. Anon-single-crystal forming method according to claim 3, wherein thematerial gas is excited by photo energy.
 5. A non-single-crystal layerforming method according to claim 3, wherein the material gas is excitedby both electric and photo energy.
 6. A non-single-crystal layer formingmethod according to claim 3, wherein the material gas is excited byionization into a plasma through use of high-frequency energy having itsline of electric force extending along the substrate surfaces andultrahigh-frequency electric energy.
 7. A method for forming at leastone non-single-crystal layer on a plurality of substrates, comprisingthe steps of:providing a substrate introducing chamber; providing atubular substrate holder for holding said plurality of substrates withtheir surfaces lying in vertical planes or planes close thereto;introducing said substrate holder onto said substrate introducingchamber; cleaning the substrates and the substrate holder while in thesubstrate introducing chamber, by discharging gas in the substrateintroducing chamber through use of an exhaust pump; providing at leastone reaction chamber; transferring the cleaned substrate holder andsubstrates to the reaction chamber; depositing non-single-crystal layersrespectively on said substrates through a CVD process by supplying astream of a material gas into the tubular substrate holder while in saidreaction chamber, wherein the substrate holder and the substrates areheated from the outside of the substrate holder; providing a substrateremoving chamber; transferring said substrate holder and the coatedsubstrates to the substrate removing chamber, wherein said material gasis guided by first and second gas guide means provided upstream anddownstream of a gas passage, so that when said tubular substrate holderis transferred to the reaction chamber for depositing, said tubularsubstrate holder is positioned within said gas passage between saidfirst and second gas guide means so that said first gas guide means,said tubular substrate holder and said second gas guide means togethersubstantially define a flow path of said material gas through saidreaction chamber; wherein the material gas is ionized into a plasma forexcitation by high-frequency electric energy having its line of electricforce extending along the substrate surfaces; wherein the high-frequencyelectric energy is obtained across first and second electrodes disposedin the reaction chamber, and wherein the material gas is ionized into aplasma in a state in which the substrates are disposed between the firstand second electrodes and are not supplied with the potential of eitherof the first and second electrodes; and wherein the material gas isionized into a plasma in a state in which the first electrode isdisposed as a cathode upstream of the material gas passage and thesecond electrode is disposed as an anode downstream of the material gaspassage.
 8. A non-single-crystal layer forming method according to claim7, wherein the material gas is ionized into a plasma in a state in whichelectrodes permitting the passage therethrough of the material gas aredisposed as the first and second electrodes in the first and second gasguide means.